Get To Know About the Substrate Challenge of GaN Substrate

GaN meant for high frequency

Gallium nitride (GaN) is to modern-day and high-frequency applications like RF LDMOS was too early cellular networks. GaN as compared with Si LDMOS and gallium arsenide (GaAs) has long been known to offer benefits that are hard to beat:

Substrate challenge

There are technological challenges, including the difficulty in growing GaN films although the conversion to GaN is well underway. So, for heteroepitaxial growth, another substrate is required.

The substrate material choice is critical. This material must not only have a low lattice mismatch with GaN but also high thermal conductivity.

All requirements are satisfied best by SiC currently while companies have manufactured GaN devices on the diamond, silicon carbide, and Si substrates.

GaN on SiC or GaN on Si

A Closely matching lattice structure is SiC. Thus, with lower dislocation density, GaN epitaxy can be grown on it as compared to other materials. This enhances reliability and minimizes leakage.

On the other hand, Si matches neither thermal properties nor GaN’s lattice structure. This causes higher manufacturability issues and defect densities as well as reliability due to warping. Companies have to use an overall more complicated epitaxial structure and complex buffer layers to overcome these problems.

For realistic drain efficiencies, high power densities are allowed by it to be efficiently dissipated as SiC, and GaN has much better thermal conductivity as compared to Si. The extreme channel temperatures are prevented by this due to self-heating. Moreover, as temperature increases, GaN on Si is susceptible to degraded performance as compared with GaN on SiC. Its resistivity reduces significantly when the Si substrate heats up. Negatively impacting RF performance, a substrate with low resistivity equates to higher RF loss.

Si substrates as compared to SiC substrates also have a higher parasitic capacitance, which results in Si substrates with a more limited bandwidth of operating.

Freestanding GaN Substrate becomes a compelling solution over GaN on Si due to the impact of GaN on SiC devices on the factoring in the higher efficiency, the savings in weight, as well as space, total costs, smaller, die size, and better high-frequency operation.

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